參數(shù)資料
型號: BUK6207-55C
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: N-channel TrenchMOS intermediate level FET
中文描述: 90 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝: PLASTIC, SC-63, DPAK-3
文件頁數(shù): 4/14頁
文件大?。?/td> 160K
代理商: BUK6207-55C
BUK6207-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
4 of 14
NXP Semiconductors
BUK6207-55C
N-channel TrenchMOS intermediate level FET
V
GS
10 V
(1) Capped at 90 A due to package
Fig 1.
Continuous drain current as a function of
mounting base temperature
Fig 2.
Normalized total power dissipation as a
function of mounting base temperature
T
mb
= 25 °C; I
DM
is a single pulse
Capped at 90 A by package
Fig 3.
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
003aae889
0
30
60
90
120
0
50
100
150
200
T
mb
(
°
C)
I
D
(A)
(1)
T
mb
(
°
C)
0
200
150
50
100
03na19
40
80
120
P
der
(%)
0
003aae890
10
-1
1
10
10
2
10
3
1
10
10
2
10
3
V
DS
(V)
I
D
(A)
Limit R
DSon
= V
DS
/ I
D
DC
100
μ
s
10 ms
100 ms
t
p
=10
μ
s
1 ms
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