參數(shù)資料
型號(hào)： BUK6207-55C
廠商： NXP SEMICONDUCTORS
元件分類： 功率晶體管
英文描述： N-channel TrenchMOS intermediate level FET
中文描述： 90 A, 55 V, 0.012 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252
封裝： PLASTIC, SC-63, DPAK-3
文件頁(yè)數(shù)： 2/14頁(yè)
文件大?。?/td> 160K
代理商： BUK6207-55C
BUK6207-55C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 2 — 17 September 2010
2 of 14
NXP Semiconductors
BUK6207-55C
N-channel TrenchMOS intermediate level FET
[1]
Continuous current is limited by package.
2.
Pinning information
3.
Ordering information
Avalanche ruggedness
E
DS(AL)S
non-repetitive
drain-source
avalanche energy
I
D
= 90 A; V
sup
≤
55 V;
R
GS
= 50
; V
GS
= 10 V;
T
j(init)
= 25 °C; unclamped
-
-
143
mJ
Dynamic characteristics
Q
GD
gate-drain charge
I
D
= 25 A; V
DS
= 44 V;
V
GS
= 10 V; see
Figure 13
;
see
Figure 14
-
19
-
nC
Table 1.
Symbol
Quick reference data
…continued
Parameter
Conditions
Min
Typ
Max
Unit
Table 2.
Pin
1
2
3
mb
Pinning information
Symbol
Description
G
gate
D
drain
S
source
D
mounting base; connected to
drain
Simplified outline
Graphic symbol
SOT428 (DPAK)
3
2
mb
1
S
D
G
mbb076
Table 3.
Type number
Ordering information
Package
Name
DPAK
Description
plastic single-ended surface-mounted package (DPAK); 3 leads
(one lead cropped)
Version
SOT428
BUK6207-55C
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK6207-55C,118 功能描述:MOSFET N-CHAN 55V 81A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6208-40C 制造商:NXP Semiconductors 功能描述:MOSFETN CH40V70ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,70A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,40V,70A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:40V; On Resistance Rds(on):5.2mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6208-40C,118 功能描述:MOSFET N-CHAN 40V 90A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK6209-30C 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V46ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,46A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,46A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:50A; Drain Source Voltage Vds:30V; On Resistance Rds(on):8.3mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes
BUK6209-30C,118 功能描述:MOSFET N-CHAN 30V 50A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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