參數(shù)資料
型號: BUK582-60A
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Logic level FET
中文描述: 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET
文件頁數(shù): 5/9頁
文件大?。?/td> 61K
代理商: BUK582-60A
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK582-60A
Fig.13. Typical turn-on gate-charge characteristics.
V
GS
= f(Q
G
); conditions: I
D
= 2.5 A; parameter V
DS
Fig.14. Typical reverse diode current.
I
F
= f(V
SDS
); conditions: V
GS
= 0 V; parameter T
j
Fig.15. Normalised avalanche energy rating.
W
DSS
% = f(T
amb
); conditions: I
D
= 2.5 A
Fig.16. Avalanche energy test circuit.
W
DSS
=
0.5
LI
D
0
2
4
6
8
10
12
14
BUK582-60A
QG / nC
VGS / V
10
9
8
7
6
5
4
3
2
1
0
48
VDS / V =12
20
40
60
80
Tamb/ C
100
120
140
120
110
100
90
80
70
60
50
40
30
20
10
0
WDSS%
Normalised Avalanche Energy
0
1
VSDS / V
IF / A
BUK582-60A
10
9
8
7
6
5
4
3
2
1
0
0.5
1.5
25
Tj / C = 150
L
T.U.T.
VDD
RGS
R 01
shunt
VDS
-ID/100
+
-
VGS
0
2
BV
DSS
/(
BV
DSS
V
DD
)
April 1993
5
Rev 1.000
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