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參數(shù)資料
| 型號： | BUK582-60A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 2.5 A, 60 V, 0.15 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 1/9頁 |
| 文件大?。?/td> | 61K |
| 代理商： | BUK582-60A |
Philips Semiconductors
Product Specification
PowerMOS transistor
Logic level FET
BUK582-60A
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
logic level field-effect power
transistor in a plastic envelope
suitable for surface mount
applications.
The device is intended for use in
automotive and general purpose
switching applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
T
j
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Junction temperature
Drain-source on-state
resistance;
60
2.5
1.7
150
0.15
V
A
W
C
V
GS
= 5 V
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
4
drain (tab)
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
T
amb
= 25 C
T
amb
= 100 C
T
amb
= 25 C
T
amb
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
60
60
15
2.5
1.5
10
1.7
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-b
R
th j-amb
PARAMETER
From junction to board
1
From junction to ambient
CONDITIONS
Mounted on any PCB e.g. Fig.18
Mounted on PCB of Fig.18
MIN.
-
-
TYP.
40
-
MAX.
-
75
UNIT
K/W
K/W
4
1
2
3
d
g
s
1
Temperature measured 1-3 mm from tab.
April 1993
1
Rev 1.000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUK583-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK6207-30C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH30V81ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,81A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,30V,81A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:30V; On Resistance Rds(on):4.4mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK6207-30C,118 | 功能描述:MOSFET N-CHAN 30V 81A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK6207-55C | 制造商:NXP Semiconductors 功能描述:MOSFETN CH55V90ASOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,90A,SOT428 制造商:NXP Semiconductors 功能描述:MOSFET,N CH,55V,90A,SOT428; Transistor Polarity:N Channel; Continuous Drain Current Id:90A; Drain Source Voltage Vds:55V; On Resistance Rds(on):6.6mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:2.3V; No. of Pins:3 ;RoHS Compliant: Yes |
| BUK6207-55C,118 | 功能描述:MOSFET N-CHAN 55V 81A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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