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參數(shù)資料
| 型號： | BUK565-200A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor Logic level FET |
| 中文描述： | 14 A, 200 V, 0.23 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 3/7頁 |
| 文件大?。?/td> | 74K |
| 代理商： | BUK565-200A |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level FET
BUK565-200A
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
mb
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
mb
); conditions: V
GS
≥
5 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
0
20
40
60
80
Tmb / C
100
120
140
160
180
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth j-mb / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx55-lv
D =
D =
t
p
t
p
T
T
P
D
t
0
20
40
60
80
Tmb / C
100
120
140
160
180
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0
2
4
6
8
10
12
14
16
18
20
BUK555-200A
VDS / V
30
20
10
0
3
4
5
10
ID / A
VGS / V =
1
10
100
VDS / V
1000
100
10
1
0.1
DC
BUK555-200A,B
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
RDSON =VDSID
A
0
4
8
12
16
20
24
28
BUK555-200A
ID / A
1.0
0.8
0.6
0.4
0.2
0
2.5
3
3.5
4
5
10
RDS(ON) / Ohm
VGS / V =
February 1996
3
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK565-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK565-60H | 制造商:NXP Semiconductors 功能描述: |
| BUK566-60A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK566-60H | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level FET |
| BUK573-48C | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Clamped logic level FET |
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