參數(shù)資料
型號(hào): BUK475-100B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔離版本的功率MOS場(chǎng)效應(yīng)管)
中文描述: 12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: PLASTIC, FULL PACK-3
文件頁(yè)數(shù): 4/7頁(yè)
文件大小: 72K
代理商: BUK475-100B
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 13 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
6
8
10
BUK455-100A
VDS / V
50
40
30
20
10
0
4
5
6
7
8
10
15
20
ID / A
VGS / V =
0
20
40
BUK455-100A
ID / A
gfs / S
15
10
5
0
0
20
40
BUK455-100A
ID / A
0.5
0.4
0.3
0.2
0.1
0
4.5
5
5.5
6
6.5
7
7.5
10
20
RDS(ON) / Ohm
VGS / V =
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
Normalised RDS(ON) = f(Tj)
2.0
1.5
1.0
0.5
0
a
0
2
4
6
8
10
BUK455-100A
VGS / V
50
40
30
20
10
0
Tj / C =
25
150
ID / A
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
November 1996
4
Rev 1.200
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK475-200A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-200A/B
BUK475-200B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-200A/B
BUK475-60A 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60A/B
BUK475-60B 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60A/B
BUK475-60H 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60H