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參數(shù)資料
| 型號(hào)： | BUK475-100B |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | PowerMOS transistor Isolated version of BUK455-200A/B(BUK454-200A/B隔離版本的功率MOS場(chǎng)效應(yīng)管) |
| 中文描述： | 12 A, 100 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 3/7頁(yè) |
| 文件大小： | 72K |
| 代理商： | BUK475-100B |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK475-100A/B
AVALANCHE LIMITING VALUE
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 26 A ; V
≤
50 V ;
V
GS
= 10 V ; R
GS
= 50
MIN.
-
TYP.
-
MAX.
100
UNIT
mJ
Fig.1. Normalised power dissipation.
PD% = 100
P
D
/P
D 25 C
= f(T
hs
)
Fig.2. Normalised continuous drain current.
ID% = 100
I
D
/I
D 25 C
= f(T
hs
); conditions: V
GS
≥
10 V
Fig.3. Safe operating area. T
= 25 C
I
D
& I
DM
= f(V
DS
); I
DM
single pulse; parameter t
p
Fig.4. Transient thermal impedance.
Z
th j-hs
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1
100
VDS / V
100
10
1
0.1
DC
BUK445-100A,B
10
1000
ID / A
tp = 10 us
100 us
1 ms
10 ms
100 ms
A
B
RDS(ON) = VDS/ID
0
20
40
60
80
100
120
140
Ths / C
ID%
Normalised Current Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
1E-07
1E-05
1E-03
t / s
1E-01
1E+01
Zth / (K/W)
10
1
0.1
0.01
0.001
0
0.5
0.2
0.1
0.05
0.02
BUKx45-lv
D =
D =
t
p
t
p
T
T
P
D
t
November 1996
3
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK475-200A | PowerMOS transistor Isolated version of BUK455-200A/B |
| BUK475-200B | PowerMOS transistor Isolated version of BUK455-200A/B |
| BUK475-60A | PowerMOS transistor Isolated version of BUK455-60A/B |
| BUK475-60B | PowerMOS transistor Isolated version of BUK455-60A/B |
| BUK475-60H | PowerMOS transistor Isolated version of BUK455-60H |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK475-200A | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-200A/B |
| BUK475-200B | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-200A/B |
| BUK475-60A | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60A/B |
| BUK475-60B | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60A/B |
| BUK475-60H | 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:PowerMOS transistor Isolated version of BUK455-60H |
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