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參數(shù)資料
| 型號(hào)： | BUK444-60H |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | Aluminum Electrolytic Radial Lead High Ripple, Long Life Capacitor; Capacitance: 330uF; Voltage: 200V; Case Size: 18x35.5 mm; Packaging: Bulk |
| 中文描述： | 21 A, 60 V, 0.038 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 文件頁數(shù)： | 4/7頁 |
| 文件大小： | 66K |
| 代理商： | BUK444-60H |
Philips Semiconductors
Product specification
PowerMOS transistor
BUK444-60H
Fig.5. Typical output characteristics, T
j
= 25 C
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
); conditions: V
DS
= 15 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
g
fs
= f(I
D
); conditions: V
DS
= 15 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
); I
D
= 20 A; V
GS
= 10 V
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
2
4
VDS / V
6
8
10
0
10
20
30
40
50
60
70
80
6
7
8
10
15
20
BUK474-60H
ID / A
VGS / V = 9
5
0
10
20
30
40
50
60
70
80
0
5
10
15
20
BUK474-60H
ID / A
gfs / S
Tj / C =
-40
25
150
0
10
20
30
40
50
60
70
80
0
0.05
0.1
0.15
0.2
8
9
10
20
BUK474-60H
ID / A
RDS(ON) / Ohm
7
5
VGS / V =
6
-60
-40
-20
0
20
40
Tj / C
60
80
100 120 140
a
Normalised RDS(ON) = f(Tj)
1.5
1.0
0.5
0
0
2
4
6
8
10
12
0
10
20
30
40
50
60
70
80
BUK474-60H
VGS / V
ID / A
Tj / C =
-40
25
150
-60
-40
-20
0
20
40
Tj / C
60
80
100
120
140
VGS(TO) / V
4
3
2
1
0
max.
typ.
min.
March 1996
4
Rev 1.000
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