參數(shù)資料
型號(hào): BUK446-1000B
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: PowerMOS transistor
中文描述: 1.5 A, 1000 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
封裝: TO-220, 3 PIN
文件頁數(shù): 1/7頁
文件大?。?/td> 63K
代理商: BUK446-1000B
Philips Semiconductors
Product Specification
PowerMOS transistor
BUK446-1000B
GENERAL DESCRIPTION
QUICK REFERENCE DATA
N-channel enhancement mode
field-effect power transistor in a
plastic full-pack envelope.
The device is intended for use in
Switched Mode Power Supplies
(SMPS), motor control, welding,
DC/DC and AC/DC converters, and
in general purpose switching
applications.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
I
D
P
tot
R
DS(ON)
Drain-source voltage
Drain current (DC)
Total power dissipation
Drain-source on-state
resistance
1000
1.5
30
5
V
A
W
PINNING - SOT186
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
gate
2
drain
3
source
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL
PARAMETER
V
DS
Drain-source voltage
V
DGR
Drain-gate voltage
±
V
GS
Gate-source voltage
I
D
Drain current (DC)
I
D
Drain current (DC)
I
DM
Drain current (pulse peak value)
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction Temperature
CONDITIONS
-
R
GS
= 20 k
-
T
hs
= 25 C
T
hs
= 100 C
T
hs
= 25 C
T
hs
= 25 C
-
-
MIN.
-
-
-
-
-
-
-
- 55
-
MAX.
1000
1000
30
1.5
1.0
6
30
150
150
UNIT
V
V
V
A
A
A
W
C
C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
PARAMETER
Thermal resistance junction to
heatsink
Thermal resistance junction to
ambient
CONDITIONS
with heatsink compound
MIN.
-
TYP.
-
MAX.
4.16
UNIT
K/W
R
th j-a
-
55
-
K/W
1 2 3
case
d
g
s
May 1995
1
Rev 1.200
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