參數(shù)資料
型號(hào)： BUK148-50DL
英文描述： TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR
中文描述： 晶體管| MOSFET的| N溝道| 50V五（巴西）直| 8A條（?。﹟對(duì)220VAR
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 37K
代理商： BUK148-50DL
Philips Semiconductors
Product specification
Logic level TOPFET
BUK148-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
Continuous drain source voltage
1
Continuous drain current
-
-
-
50
self -
limited
8
5
10
40
175
150
V
A
V
IS
= 5 V; T
mb
=
25 C
I
D
I
I
I
IRM
P
D
T
stg
T
j
T
sold
Continuous drain current
Continuous input current
Non-repetitive peak input current
Total power dissipation
Storage temperature
Continuous junction temperature
2
V
IS
= 5 V; T
mb
≤
110 C
-
t
p
≤
1 ms
T
mb
≤
25 C
-
normal operation
-
A
-5
-10
-
-55
-
mA
mA
W
C
C
Case temperature
during soldering
-
260
C
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Inductive load turn-off
Non-repetitive clamping energy
Repetitive clamping energy
I
DM
= 8 A; V
DD
≤
20 V
T
mb
≤
25 C
T
mb
≤
95 C; f = 250 Hz
E
DSM
E
DRM
-
-
100
20
mJ
mJ
OVERLOAD PROTECTION LIMITING VALUE
With an adequate protection supply provided via the input pin, TOPFET can protect itself from two types of overload
- overtemperature and short circuit load.
SYMBOL
PARAMETER
REQUIRED CONDITION
MIN.
MAX.
UNIT
V
DS
Drain source voltage
3
4 V
≤
V
IS
≤
5.5 V
0
35
V
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Thermal resistance
Junction to mounting base
R
th j-mb
R
th j-a
-
-
2.5
3.1
K/W
Junction to ambient
-
50
-
K/W
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
All control logic and protection functions are disabled during conduction of the source drain diode.
May 2001
2
Rev 1.100
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK148-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK149-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK150-50DL,127 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK1M200-50SDLD 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Quad channel TOPFET
BUK1M200-50SDLD,11 功能描述:MOSFET BUK1M200-50SDLD/SO20/REEL7// RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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