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參數(shù)資料
| 型號： | BUK127-50DL |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設(shè)及接口 |
| 英文描述： | PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET) |
| 中文描述： | 1.8 A BUF OR INV BASED PRPHL DRVR, PDSO4 |
| 封裝： | PLASTIC, SOT-223, 3 PIN |
| 文件頁數(shù)： | 1/11頁 |
| 文件大?。?/td> | 96K |
| 代理商： | BUK127-50DL |
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK127-50DL
DESCRIPTION
QUICK REFERENCE DATA
Monolithic temperature and
overload protected logic level power
MOSFET in
TOPFET2
technology
assembled in a 3 pin surface mount
plastic package.
SYMBOL
PARAMETER
MAX.
UNIT
V
DS
Continuous drain source voltage
50
V
I
D
Continuous drain current
0.7
A
APPLICATIONS
P
D
Total power dissipation
1.8
W
General purpose switch for driving
lamps
motors
solenoids
heaters
in automotive systems and other
applications.
T
j
Continuous junction temperature
150
C
R
DS(ON)
Drain-source on-state resistance
200
m
FEATURES
FUNCTIONAL BLOCK DIAGRAM
TrenchMOS output stage
Current limiting
Overload protection
Overtemperature protection
Protection latched reset by input
5 V logic compatible input level
Control of output stage and
supply of overload protection
circuits derived from input
Low operating input current
permits direct drive by
micro-controller
ESD protection on all pins
Overvoltage clamping for turn
off of inductive loads
Fig.1. Elements of the TOPFET.
PINNING - SOT223
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
input
2
drain
3
source
4
drain (tab)
DRAIN
SOURCE
INPUT
RIG
LOGIC AND
PROTECTION
O / V
CLAMP
POWER
MOSFET
4
1
2
3
P
D
S
I
TOPFET
October 1999
1
Rev 1.000
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BUK127-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 700MA I(D) | SOT-223 |
| BUK130-50DL | Logic level TOPFET SMD version of BUK119-50DL |
| BUK148-50DL | TRANSISTOR | MOSFET | N-CHANNEL | 50V V(BR)DSS | 8A I(D) | TO-220VAR |
| BUK200-50X_1 | PowerMOS transistor TOPFET high side switch(功率MOS晶體管TOPFET高邊開關(guān)) |
| BUK200-50X | PowerMOS transistor TOPFET high side switch |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK127-50DL T/R | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50DL,115 | 功能描述:MOSFET TAPE-7 TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK127-50GT T/R | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK127-50GT,115 | 功能描述:MOSFET TAPE-7 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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