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參數(shù)資料
| 型號： | BUK116-50S |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 外設及接口 |
| 英文描述： | Logic level TOPFET SMD version of BUK106-50L/S(BUK106-50L/S版本的邏輯電平TOPFET) |
| 中文描述： | BUF OR INV BASED PRPHL DRVR, PSSO5 |
| 封裝： | SOT-426, 5 PIN |
| 文件頁數(shù)： | 3/13頁 |
| 文件大?。?/td> | 138K |
| 代理商： | BUK116-50S |
Philips Semiconductors
Product specification
Logic level TOPFET
SMD version of BUK106-50L/S
BUK116-50L/S
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
I
DRRM
Repetitive peak clamping drain current R
IS
≥
100
1
E
DSM
Non-repetitive inductive turn-off
I
DM
= 27 A; R
IS
≥
100
energy
2
E
DRM
Repetitive inductive turn-off energy
R
IS
≥
100
; T
mb
≤
85 C;
I
= 16 A; V
DD
≤
20 V;
f = 250 Hz
I
DIRM
Repetitive peak drain to input current
3
R
IS
= 0
; t
p
≤
1 ms
MIN.
-
-
MAX.
50
1
UNIT
A
J
-
80
mJ
-
50
mA
REVERSE DIODE LIMITING VALUE
SYMBOL
I
S
PARAMETER
Continuous forward current
CONDITIONS
T
mb
= 25 C;
V
IS
= V
PS
= V
FS
= 0 V
MIN.
-
MAX.
50
UNIT
A
THERMAL CHARACTERISTIC
SYMBOL
PARAMETER
Thermal resistance
Junction to mounting base
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
-
-
0.8
1.0
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
(CL)DSR
Drain-source clamping voltage
V
(CL)DSR
Drain-source clamping voltage
CONDITIONS
R
IS
= 100
; I
D
= 10 mA
R
IS
= 100
; I
DM
= 1 A; t
p
≤
300
μ
s;
δ
≤
0.01
MIN.
50
50
TYP.
-
-
MAX.
65
70
UNIT
V
V
I
DSS
I
DSR
I
DSR
Zero input voltage drain current V
DS
= 12 V; V
IS
= 0 V
Drain source leakage current
Drain source leakage current
-
-
0.5
1
10
20
μ
A
μ
A
V
DS
= 50 V; R
IS
= 100
;
V
DS
= 40 V; R
IS
= 100
;
T
j
= 125 C
V
IS
= 8 V
V
IS
= 5 V
-
-
-
10
22
28
100
28
35
μ
A
m
m
R
DS(ON)
Drain-source on-state
resistance
I
DM
= 25 A;
t
p
≤
300
μ
s;
δ
≤
0.01
1
The input pin must be connected to the source pin by a specified external resistance to allow the power MOSFET gate source voltage to
become sufficiently positive for active clamping. Refer to INPUT CHARACTERISTICS.
2
While the protection supply voltage is connected, during overvoltage clamping it is possible that the overload protection may operate at
energies close to the limiting value. Refer to OVERLOAD PROTECTION CHARACTERISTICS.
3
Shorting the input to source with low resistance inhibits the internal overvoltage protection by preventing the power MOSFET gate source
voltage becoming positive.
July 1996
3
Rev 1.000
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| BUK118-50DL | 功能描述:MOSFET RAIL TOPFET2 RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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