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參數(shù)資料
| 型號(hào)： | BUK109-50GS |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | JFETs |
| 英文描述： | PowerMOS transistor TOPFET(功率MOS晶體管TOPFET) |
| 中文描述： | 29 A, 50 V, 0.06 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | PLASTIC, D2PAK, 3 PIN |
| 文件頁(yè)數(shù)： | 9/12頁(yè) |
| 文件大小： | 115K |
| 代理商： | BUK109-50GS |
Philips Semiconductors
Product specification
PowerMOS transistor
TOPFET
BUK109-50GS
Fig.24. Typical switching waveforms, inductive load.
V
DD
= 10 V; I
D
= 6 A; R
I
= 50
, T
j
= 25 C.
Fig.25. Typical switching waveforms, inductive load.
V
DD
= 10 V; I
D
= 6 A; R
I
= 50
, T
j
= 25 C.
Fig.26. Normalised limiting clamping energy.
E
DSM
% = f(T
mb
); conditions: I
D
= 27 A; V
IS
= 10 V
Fig.27. Clamping energy test circuit, R
IS
= 50
.
E
DSM
=
0.5
LI
D
Fig.28. Typical off-state leakage current.
I
DSS
= f(T
j
); Conditions: V
DS
= 40 V; I
IS
= 0 V.
Fig.29. Normalised input current (normal operation).
I
IS
/I
IS
25 C = f(T
j
); V
IS
= 10 V
0
10
20
INDUCTIVE TURN-ON
time / us
BUK109-50GS
10
5
0
VIS / V
VDS / V
ID / A
td on
90%
10%
10%
tr
L
D.U.T.
VDD
RIS
R 01
shunt
VDS
-ID/100
+
-
VIS
0
P
D
S
I
TOPFET
ID
0
VDS
0
VDD
V(CL)DSS
Schottky
2
V
(
CL
)
DSS
/(
V
(
CL
)
DSS
V
DD
)
0
20
40
60
80
100
120
140
Tj / C
Idss
1 mA
100 uA
10 uA
1 uA
100 nA
typ.
0
20
40
INDUCTIVE TURN-OFF
time / us
BUK109-50GS
VDS / V
10
5
0
10
30
50
VIS / V
ID / A
90%
10%
90%
td off
tf
0
20
40
60
80
100
120
140
Tmb / C
EDSM%
120
110
100
90
80
70
60
50
40
30
20
10
0
-60
-20
20
60
Tj / C
100
140
180
Iiso normalised to 25 C
1.5
1
0.5
June 1996
9
Rev 1.000
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PDF描述 |
|---|---|
| BUK111-50GL | Logic level TOPFET SMD version of BUK112-50GL |
| BUK112-50GL | N-Channel Enhancement MOSFET |
| BUK113-50DL | N-Channel Enhancement MOSFET |
| BUK114-50L | Logic level TOPFET SMD version of BUK104-50L/S |
| BUK114-50S | Logic level TOPFET SMD version of BUK104-50L/S |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUK110-50DL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor Logic level TOPFET |
| BUK110-50GL /T3 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GL,118 | 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUK110-50GS | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:PowerMOS transistor TOPFET |
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