參數(shù)資料
型號(hào)： BUK108-50DL
廠商： NXP SEMICONDUCTORS
元件分類： 外設(shè)及接口
英文描述： PowerMOS transistor Logic level TOPFET(功率MOS晶體管邏輯電平TOPFET)
中文描述： BUF OR INV BASED PRPHL DRVR, SSO3
封裝： SSO-3
文件頁數(shù)： 2/10頁
文件大?。?/td> 89K
代理商： BUK108-50DL
Philips Semiconductors
Product specification
PowerMOS transistor
Logic level TOPFET
BUK108-50DL
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
V
IS
I
D
I
D
I
DRM
P
D
T
stg
T
j
T
sold
Continuous drain source voltage
1
Continuous input voltage
Continuous drain current
Continuous drain current
Repetitive peak on-state drain current
Total power dissipation
Storage temperature
Continuous junction temperature
2
-
-
-
0
-
-
-
-
50
6
13.5
8.5
54
40
150
150
V
V
A
A
A
W
C
C
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
100 C; V
IS
= 5 V
T
mb
≤
25 C; V
IS
= 5 V
T
mb
≤
25 C
-
normal operation
-55
-
Lead temperature
during soldering
-
250
C
OVERLOAD PROTECTION LIMITING VALUES
With the protection supply provided via the input pin, TOPFET can protect itself from two types of overload.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
ISP
Protection supply voltage
3
for valid protection
4
-
V
Over temperature protection
V
DDP(T)
Protected drain source supply voltage
V
IS
= 5 V
-
50
V
Short circuit load protection
4
Protected drain source supply
voltage
5
Instantaneous overload dissipation
V
DDP(P)
V
IS
= 5 V
-
24
V
P
DSM
T
mb
= 25 C
-
0.6
kW
OVERVOLTAGE CLAMPING LIMITING VALUES
At a drain source voltage above 50 V the power MOSFET is actively turned on to clamp overvoltage transients.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
I
DROM
E
DSM
Repetitive peak clamping current
Non-repetitive clamping energy
V
IS
= 0 V
T
mb
≤
25 C; I
DM
= 15 A;
V
DD
≤
20 V; inductive load
T
mb
≤
95 C; I
DM
= 8 A;
V
DD
≤
20 V; f = 250 Hz
-
-
15
200
A
mJ
E
DRM
Repetitive clamping energy
-
20
mJ
ESD LIMITING VALUE
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
C
Electrostatic discharge capacitor
voltage
Human body model;
C = 250 pF; R = 1.5 k
-
2
kV
1
Prior to the onset of overvoltage clamping. For voltages above this value, safe operation is limited by the overvoltage clamping energy.
2
A higher T
j
is allowed as an overload condition but at the threshold T
j(TO)
the over temperature trip operates to protect the switch.
3
The input voltage for which the overload protection circuits are functional.
4
For further information, refer to OVERLOAD PROTECTION CHARACTERISTICS.
5
The short circuit load protection is able to save the device providing the instantaneous on-state dissipation is less than the limiting value for
P
DSM
, which is always the case when V
DS
is less than V
DDP(P)
maximum.
June 1996
2
Rev 1.000
相關(guān)PDF資料
PDF描述
BUK108-50GL PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
BUK108-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
BUK109-50DL PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
BUK109-50GL PowerMOS transistor Logic level TOPFET(功率MOS場效應(yīng)管邏輯電平TOPFET)
BUK109-50GS PowerMOS transistor TOPFET(功率MOS晶體管TOPFET)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BUK108-50DL /T3 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK108-50DL,118 功能描述:MOSFET TAPE13 TOPFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
BUK108-50GL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK108-50GS 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
BUK109-50DL 制造商:未知廠家 制造商全稱:未知廠家 功能描述:N-Channel Enhancement MOSFET
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