參數(shù)資料
型號(hào): BUJ403AX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 6 A, 550 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, FULL PACK-3
文件頁數(shù): 2/7頁
文件大?。?/td> 70K
代理商: BUJ403AX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403AX
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
R.M.S. isolation voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
f = 50-60 Hz; sinusoidal
waveform;
R.H.
65% ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
10
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
,I
CBO
Collector cut-off current
1
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
CEO
= V
(550V)
V
= 7 V; I
= 0 A
I
= 0 A; I
C
= 10 mA;
L = 25 mH
I
C
= 2.0 A; I
B
= 0.4 A
I
C
= 2.0 A; I
B
= 0.4 A
I
C
= 1 mA; V
= 5 V
I
C
= 500 mA; V
= 5 V
I
C
= 2 A; V
= 5 V
I
C
= 3.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
CEO
I
EBO
V
CEOsust
Collector cut-off current
1
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
-
-
0.1
0.1
-
mA
mA
V
550
V
CEsat
V
BEsat
h
FE
h
FE
h
FEsat
h
FEsat
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
0.15
0.91
25
30
18.5
15.5
1.0
1.5
V
V
13
20
13
-
47
25
-
DC current gain
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified8
SYMBOL
PARAMETER
Switching times (resistive load)
CONDITIONS
I
Con
= 2.5 A; I
= -I
= 0.5 A;
R
L
= 75 ohms; V
BB2
= 4 V;
TYP.
MAX.
UNIT
t
on
t
s
t
f
Turn-on time
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
-
-
0.5
3
0.3
μ
s
μ
s
μ
s
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
-
1.5
300
μ
s
ns
170
I
= 2.5 A; I
Bon
= 0.5 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
-
-
1.8
300
μ
s
ns
1
Measured with half sine-wave voltage (curve tracer).
December 1998
2
Rev 1.200
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