參數(shù)資料
型號: BUJ403A
廠商: NXP Semiconductors N.V.
元件分類: 功率晶體管
英文描述: NPN power transistor
封裝: BUJ403A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;BUJ403A/DG<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<,;
文件頁數(shù): 5/9頁
文件大?。?/td> 119K
代理商: BUJ403A
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
Fig.7. Normalised power dissipation.
PD% = 100
PD/PD
25C
= f (T
mb
)
Fig.8. Typical DC current gain. h
FE
= f(I
C
)
parameter V
CE
Fig.9. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IB); T
j
=25C.
Fig.10. Base-Emitter saturation voltage.
Solid lines = typ values, V
BEsat
= f(IC); at IC/IB =4.
Fig.11. Collector-Emitter saturation voltage.
Solid lines = typ values, V
CEsat
= f(IC); at IC/IB =4.
Fig.12. Transient thermal impedance.
Z
th j-mb
= f(t); parameter D = t
p
/T
0
20
40
60
80
100
120
140
Tmb / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
0.1
1
10
IC/A
VBEsat/V
0.0
0.1
0.2
0.3
0.4
0.5
0.1
1
10
IC/A
VCEsat/V
0.01
1
100
10
1
0.1
10
h
FE
IC / A
Tj = 25 C
1V
5V
0.0
0.4
0.8
1.2
1.6
2.0
0.01
0.10
1.00
10.00
IB/A
VCEsat/V
IC=1A
2A
3A
4A
1E-06
1E-04
1E-02
t / s
1E+00
Zth / (K/W)
10
1
0.1
0.01
0
0.5
0.2
0.1
0.05
0.02
D =
tp
T
T
P
D
t
t
p
D=
December 1998
4
Rev 1.200
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