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參數(shù)資料
| 型號： | BUJ403A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 封裝： | BUJ403A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,;BUJ403A/DG<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<,; |
| 文件頁數(shù)： | 2/9頁 |
| 文件大小： | 119K |
| 代理商： | BUJ403A |
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ403A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
DC current gain
Fall time
V
BE
= 0 V
-
-
-
-
-
-
1200
1200
550
6
10
100
1.0
-
300
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 0.4 A
I
C
= 3 A; V
CE
= 5 V
I
C
=2.5 A; I
B1
=0.5 A
0.15
15.5
170
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V
BE
= 0 V
-
-
-
-
-
-
-
-
1200
550
1200
6
10
3
5
100
150
150
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
-65
-
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
Junction to mounting base
-
1.25
K/W
Junction to ambient
in free air
60
-
K/W
1 2 3
tab
b
c
e
December 1998
1
Rev 1.200
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ403A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 550V 6A 3-Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ403A/DG,127 | 功能描述:MOSFET NPN POWER TRANSISTOR RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| BUJ403A127 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BUJ403AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ403BX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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