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參數(shù)資料
| 型號(hào)： | BUJ106AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 10 A, 400 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁(yè)數(shù)： | 1/7頁(yè) |
| 文件大?。?/td> | 63K |
| 代理商： | BUJ106AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106AX
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in a plastic full-pack envelope intended
for use in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor
control systems, etc.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
0.4
10
20
MAX.
700
700
400
10
20
26
1.0
15
50
UNIT
V
V
V
A
A
W
V
T
hs
≤
25 C
I
C
= 6.0 A;I
B
= 1.2 A
I
C
= 6.0 A; V
CE
= 5 V
I
C
= 5.0 A; I
B1
= 1A
Fall time
ns
PINNING - SOT186A
PIN CONFIGURATION
SYMBOL
PIN
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector to emitter voltage
V
CEO
Collector to emitter voltage (open base)
V
CBO
Collector to base voltage (open emitter)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
700
400
700
10
20
5
10
26
150
150
UNIT
V
V
V
A
A
A
A
W
C
C
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
thj-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
With heatsink compound
in free air
TYP.
-
60
MAX.
4.8
-
UNIT
K/W
K/W
1 2 3
case
b
c
e
March 1999
1
Rev 2.000
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