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參數(shù)資料
| 型號： | BUJ106A |
| 廠商： | NXP Semiconductors N.V. |
| 元件分類： | 功率晶體管 |
| 英文描述： | NPN power transistor |
| 封裝： | BUJ106A<SOT78 (TO-220AB)|<<http://www.nxp.com/packages/SOT78.html<1<week 1, 2005,; |
| 文件頁數(shù)： | 2/9頁 |
| 文件大?。?/td> | 125K |
| 代理商： | BUJ106A |
NXP
Semiconductors
Product specification
Silicon Diffused Power Transistor
BUJ106A
GENERAL DESCRIPTION
High-voltage, high-speed planar-passivated npn power switching transistor in TO220AB envelope intended for use
in high frequency electronic lighting ballast applications, converters, inverters, switching regulators, motor control
systems, etc.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CBO
V
CEO
I
C
I
CM
P
tot
V
CEsat
h
FEsat
t
f
Collector-emitter voltage peak value
Collector-Base voltage (open emitter)
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
V
BE
= 0 V
-
-
-
-
-
-
700
700
400
10
20
80
1.0
15
50
V
V
V
A
A
W
V
T
mb
≤
25 C
I
C
B
= 1.2 A
I
C
= 6.0 A; V
CE
= 5 V
I
C
= 5.0 A; I
B1
= 1 A
0.4
10
20
Fall time
ns
PINNING - TO220AB
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
CESM
V
CEO
V
CBO
I
C
I
CM
I
B
I
BM
P
tot
T
stg
T
j
Collector to emitter voltage
Collector to emitter voltage (open base)
Collector to base voltage (open emitter)
Collector current (DC)
Collector current peak value
Base current (DC)
Base current peak value
Total power dissipation
Storage temperature
Junction temperature
V
BE
= 0 V
-
-
-
-
-
-
-
-
700
400
700
10
20
5
10
80
150
150
V
V
V
A
A
A
A
W
C
C
T
mb
≤
25 C
-65
-
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
R
th j-mb
R
th j-a
Junction to mounting base
-
1.56
K/W
Junction to ambient
in free air
60
-
K/W
1 2 3
tab
b
c
e
March 1999
1
Rev 2.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUJ106A,127 | 功能描述:兩極晶體管 - BJT Trans GP BJT NPN 400V 10A 3Pin(3+Tab) RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| BUJ106AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ202A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ202AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BUJ204A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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