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參數(shù)資料
| 型號： | BUF742 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關晶體管 |
| 文件頁數(shù)： | 5/8頁 |
| 文件大小： | 129K |
| 代理商： | BUF742 |
BUF742
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
5 (8)
Typical Characteristics
(T
case
= 25 C unless otherwise specified)
0
1
2
3
4
5
6
0
100
V
CE
– Collector Emitter Voltage ( V )
200
300
400
500
600
13706
I
C
0.1 x I
C
< I
B2
< 0.5 x I
C
V
CEsat
< 2 V
Figure 4. V
CEW
– Diagram
0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0
1
2
3
4
5
6
7
8
9
10 11
V
CE
– Collector Emitter Voltage ( V )
13708
I
C
0.6A
0.5A
I
B
=0.1A
0.2A
0.4A
0.3A
Figure 5. I
C
vs. V
CE
1
0.01
10
100
0.10
1.00
10.00
I
C
– Collector Current ( A )
13710
h
F
5V
V
CE
=2V
10V
Figure 6. h
FE
vs. I
C
0.01
0.10
1.00
10.00
100.00
0
25
50
75
100
125
150
T
case
– Case Temperature (
°
C )
13707
P
t
12.5K/W
25K/W
50K/W
R
thJA
=85K/W
2.5K/W
Figure 7. P
tot
vs.T
case
0.01
0.10
1.00
10.00
0.01
0.10
I
B
– Base Current ( A )
1.00
10.00
13709
V
C
I
C
=0.5A
2A
3A
5A
1A
Figure 8. V
CEsat
vs. I
B
1
0.01
10
100
0.10
1.00
10.00
I
C
– Collector Current ( A )
13711
h
F
V
CE
=2V
T
j
= 125
°
C
75
°
C
25
°
C
Figure 9. h
FE
vs. I
C
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