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參數(shù)資料
| 型號(hào)： | BUF742 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開(kāi)關(guān)晶體管 |
| 文件頁(yè)數(shù)： | 2/8頁(yè) |
| 文件大?。?/td> | 129K |
| 代理商： | BUF742 |
BUF742
TELEFUNKEN Semiconductors
Rev. A2, 18-Jul-97
2 (8)
Electrical Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Collector cut-off current
Test Conditions
Symbol
I
CES
I
CES
V
(BR)CEO
Min
Typ
Max
10
200
Unit
A
A
V
V
CE
= 900 V
V
CE
= 900 V; T
case
= 150 C
I
C
= 500 mA; L = 125 mH;
I
measure
= 100 mA
I
E
= 1 mA
I
C
= 0.8 A; I
B
= 0.2 A
I
C
= 2.5 A; I
B
= 0.8 A
I
C
= 0.8 A; I
B
= 0.2 A
I
C
= 2.5 A; I
B
= 0.8 A
V
CE
= 2 V; I
C
= 10 mA
V
CE
= 2 V; I
C
= 0.8 A
V
CE
= 2 V; I
C
= 2.5 A
V
CE
= 2 V; I
C
= 5 A
V
S
= 50 V; L = 1 mH; I
C
= 2.5 A;
I
B1
= 0.5 A; –I
B2
= 0.5 A;
–V
BE(off)
= 5 V
I
C
= 2.5 A; I
B
= 0.5 A; t = 1 s
I
C
= 2.5 A; I
B
= 0.5 A; t = 3 s
I
C
= 200 mA; V
CE
= 10 V;
f = 1 MHz
Collector-emitter breakdown
voltage (figure 1)
Emitter-base breakdown voltage
Collector-emitter saturation
voltage
Base-emitter saturation voltage
400
V
(BR)EBO
V
CEsat
V
CEsat
V
BEsat
V
BEsat
h
FE
h
FE
h
FE
h
FE
V
CEW
11
V
V
V
V
V
0.2
0.4
1
1.2
DC forward current transfer ratio
15
15
7
4
500
Collector-emitter working voltage
V
Dynamic saturation voltage
V
CEsatdyn
V
CEsatdyn
f
T
7
12
3
V
V
1.5
Gain bandwidth product
4
MHz
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