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參數(shù)資料
| 型號： | BUF654 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關(guān)晶體管 |
| 文件頁數(shù)： | 6/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | BUF654 |
BUF654
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
6 (9)
t
s
–I
B2
/ I
B1
95 9749
0
1
2
3
4
0
2
4
6
8
10
saturated switching
R-load
I
C
= 2A, I
B1
= 0.4A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 10. t
s
vs. –I
B2
/I
B1
t
s
–I
B2
/ I
B1
95 9748
0
1
2
3
4
5
4
3
2
1
0
saturated switching
L-load
I
C
= 2A, I
B1
= 0.4A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 11. t
s
vs. –I
B2
/I
B1
t
s
–I
B2
/ I
B1
95 9760
0
1
2
3
4
0
2
4
6
8
10
saturated switching
R-load
I
C
= 5A, I
B1
= 1A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 12. t
s
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
95 9762
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
saturated switching
R-load
I
C
= 2A, I
B1
= 0.4A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 13. t
f
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
95 9761
0
1
2
3
4
0
0.1
0.2
0.3
0.4
0.5
saturated switching
L-load
I
C
= 2A, I
B1
= 0.4A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 14. t
f
vs. –I
B2
/I
B1
t
f
–I
B2
/ I
B1
95 9764
0
1
2
3
4
0
0.2
0.4
0.6
0.8
1.0
saturated switching
R-load
I
C
= 5A, I
B1
= 1A
T
j
= 125
°
C
T
j
= 25
°
C
Figure 15. t
f
vs. –I
B2
/I
B1
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BUF660 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 14A I(C) | TO-220AB |
| BUF672 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 450V V(BR)CEO | 11A I(C) | TO-220AB |
| BUF708D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 8A I(C) | TO-220AB |
| BUF7216 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN High Voltage Switching Transistor |
| BUF725D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR |
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