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參數(shù)資料
| 型號： | BUF654 |
| 英文描述： | Silicon NPN High Voltage Switching Transistor |
| 中文描述： | 硅npn型高壓開關晶體管 |
| 文件頁數(shù)： | 3/9頁 |
| 文件大?。?/td> | 134K |
| 代理商： | BUF654 |
BUF654
TELEFUNKEN Semiconductors
Rev. D2, 18-Jul-97
3 (9)
Switching Characteristics
T
case
= 25
°
C, unless otherwise specified
Parameter
Resistive load (figure 2)
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
Turn on time
Storage time
Fall time
Inductive load (figure 3)
Storage time
Fall time
Storage time
Fall time
Storage time
Fall time
Test Conditions
Symbol
Min
Typ
Max
Unit
I
= 2 A; I
= 0.5 A;–I
= 1 A;
C
B1
V
S
= 250 V
t
on
t
s
t
f
t
on
t
s
t
f
t
on
t
s
t
f
0.15
2.2
0.3
0.3
1.3
0.12
0.5
1.2
0.1
0.25
3
0.4
s
s
s
s
s
s
s
s
s
B2
I
= 5 A; I
= 1 A;–I
= 2.5 A;
C
B1
V
S
= 250 V
B2
I
= 6 A; I
= 1.2 A; –I
= 3 A;
C
B1
V
S
= 250 V
0.7
1.5
0.15
B2
V
= 300 V; L = 200 H; –V
= 5 V;
clamp
I
C
= 2 A; I
B1
= 0.5 A; –I
B2
= 1 A
V
= 300 V; L = 200 H; –V
= 5 V;
clamp
I
C
= 5 A; I
B1
= 1 A; –I
B2
= 2.5 A
V
clamp
= 300 V; L = 200 H; –V
= 5 V;
I
C
= 6 A; I
B1
= 1.2 A; –I
B2
= 3 A
t
s
t
f
t
s
t
f
t
s
t
f
2.3
0.1
1.5
0.1
1.1
0.05
3
s
s
s
s
s
s
BE
0.2
2
0.18
1.5
0.1
BE
BE
+
3 Pulses
94 8863
t
p
T
t
p
0.1
10 ms
V
S2
10 V
I
B
I
C
5
I
C
L
C
V
0 to 30 V
V
(BR)CEO
I
(BR)R
100 m
I
C
V
CE
V
(BR)CEO
I
measure
Figure 1. Test circuit for V
(BR)CE0
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| BUF660 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 400V V(BR)CEO | 14A I(C) | TO-220AB |
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| BUF708D | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 500V V(BR)CEO | 8A I(C) | TO-220AB |
| BUF7216 | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:Silicon NPN High Voltage Switching Transistor |
| BUF725D | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:SILICON NPN HIGH VOLTAGE SWITCHING TRANSISTOR |
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