參數(shù)資料
型號(hào)： BUF410A
廠商： 意法半導(dǎo)體
英文描述： High Voltage Fast-Switching NPN Power Transistor(高電壓快速開(kāi)關(guān)NPN功率晶體管)
中文描述： 高壓快速NPN電源開(kāi)關(guān)晶體管（高電壓快速開(kāi)關(guān)npn型功率晶體管）
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 68K
代理商： BUF410A
THERMAL DATA
R
thj-case
Thermal Resistance Junction-Case
Max
1
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unlessotherwisespecified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CER
Collector Cut-off
Current (R
BE
= 100
)
V
CE
= V
CEV
V
CE
= V
CEV
T
c
= 100
o
C
0.2
1
mA
mA
I
CEV
Collector Cut-off
Current (I
B
= 0)
Emitter Cut-off Current
(I
C
= 0)
V
CEO(sus)
Collector-Emitter
Sustaining Voltage
V
EBO
Emitter Base Voltage
(I
C
= 0)
V
CE(sat)
Collector-Emitter
Saturation Voltage
V
CE
= V
CEV
V
BE
= -1.5 V
V
CE
= V
CEV
V
BE
= -1.5 V T
c
=100
o
C
V
BE
= 5 V
0.2
1
mA
mA
I
EBO
1
mA
I
C
= 200 mA
L = 25 mH
450
V
I
E
= 50 mA
7
V
I
C
= 5 A
I
C
= 5 A
I
C
=10 A
I
C
=10 A
I
B
= 0.5 A
I
B
= 0.5 A
I
B
= 2 A
I
B
= 2 A
T
c
=100
o
C
T
c
=100
o
C
0.8
0.5
2.8
2
V
V
V
V
V
BE(sat)
Base-Emitter
Saturation Voltage
I
C
= 5 A
I
C
= 5 A
I
C
=10 A
I
C
=10 A
V
CC
= 300 V R
C
= 0
I
B1
= 0.75 A T
j
=25
o
C
I
B1
= 0.75 A T
j
=100
o
C
I
B1
= 3 A
I
B
= 0.5 A
I
B
= 0.5 A
I
B
= 2 A
I
B
= 2 A
T
c
=100
o
C
T
c
=100
o
C
t
p
= 3
μ
s
0.9
1.1
1.5
1.5
V
V
V
V
di
c
/dt
Rate of rise on-state
Collector Current
T
j
=100
o
C
45
100
60
A
/μ
s
A
/μ
s
A
/μ
s
V
CE
(3
μ
s)
Collector-Emitter
Dynamic Voltage
V
CC
= 300 V
I
B1
= 0.75 A
I
B1
= 0.75 A
V
CC
= 300 V
I
B1
= 0.75 A
I
B1
= 0.75 A
R
C
= 60
T
j
=25
o
C
T
j
=100
o
C
R
C
= 60
T
j
=25
o
C
T
j
=100
o
C
2.1
8
V
V
V
CE
(5
μ
s)
Collector-Emitter
Dynamic Voltage
1.1
4
V
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
I
C
= 5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 0.5 mH
I
C
= 5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 0.5 mH
IC = 5 A
V
BB
= - 5 V
V
clamp
= 400 V
L = 0.5 mH
I
C
= 5 A
V
BB
= 0
V
clamp
= 400 V
L = 0.5 mH
V
CC
= 50 V
R
BB
= 1.2
I
B1
= 0.5 A
0.8
0.05
0.08
μ
s
μ
s
μ
s
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
V
CC
= 50 V
R
BB
= 1.2
I
B1
= 0.5 A
T
j
=100
o
C
V
CC
= 50 V
R
BB
= 1.2
I
B1
= 0.5 A
T
j
=125
C
V
CC
= 50 V
R
BB
= 0.3
I
B1
= 0.5 A
1.8
0.1
0.18
μ
s
μ
s
μ
s
V
CEW
Maximum Collector
Emitter Voltage
without Snubber
500
V
t
s
t
f
t
c
Storage Time
Fall Time
Cross Over Time
1.5
0.04
0.07
μ
s
μ
s
μ
s
BUF410A
2/6
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