參數(shù)資料
型號: BU52003GUL-E2
廠商: Rohm Semiconductor
文件頁數(shù): 2/22頁
文件大?。?/td> 505K
描述: IC HALL EFFECT SW BIPO VCSP50L1
特色產(chǎn)品: ROHM Hall Effect Sensor ICs
標(biāo)準(zhǔn)包裝: 1
傳感范圍: -5.5mT 跳閘,-0.8mT 釋放
類型: 單極開關(guān)
電源電壓: 2.4 V ~ 3.3 V
電流 - 電源: 9µA
電流 - 輸出(最大): ±1mA
輸出類型: 數(shù)字,開路集電極
特點(diǎn): 穩(wěn)壓電壓
工作溫度: -40°C ~ 85°C
封裝/外殼: 4-UFBGA,CSPBGA
供應(yīng)商設(shè)備封裝: VCSP50L1
包裝: 標(biāo)準(zhǔn)包裝
產(chǎn)品目錄頁面: 1377 (CN2011-ZH PDF)
其它名稱: BU52003GUL-E2DKR
BU52002GUL,BU52003GUL,BU52012NVX,BU52012HFV,BU52013HFV
Technical Note
 
2/19
www.rohm.com
2010.08 - Rev.C
?2010 ROHM Co., Ltd. All rights reserved.
螦bsolute maximum ratings
BU52002GUL,BU52003GUL (Ta=25)
   BU52012NVX (Ta=25) 
Parameter
Symbol
Ratings
Unit
Parameter
Symbol
Ratings
Unit
Power Supply Voltage
V
DD
 
-0.1^+4.5
;
1
V
Power Supply Voltage
V
DD
 
-0.1^+4.5
;
3
V
Output Current
I
OUT
?
mA
Output Current
I
OUT
?.5
mA
Power Dissipation
Pd
420
;
2
 
mW
Power Dissipation
Pd
2049
 
;
4
 
mW
Operating
Temperature Range
T
opr
 
-40^+85

Operating
Temperature Range
T
opr
 
-40^+85

Storage
Temperature Range
T
stg
 
-40^+125

Storage
Temperature Range
T
stg
 
-40^+125

;1. Not to exceed Pd
;2. Reduced by 4.20mW for each increase in Ta of 1 over 25
 
(mounted on 50mm?8mm Glass-epoxy PCB)
   3. Not to exceed Pd
;4. Reduced by 5.36mW for each increase in Ta of 1 over 25
 
(mounted on 70mm?0mm?.6mm Glass-epoxy PCB)
 
BU52012HFV,BU52013HFV (Ta=25) 
Parameter
Symbol
Ratings
Unit
Power Supply Voltage
V
DD
 
-0.1^+4.5
;
5
V
Output Current
I
OUT
?.5
mA
Power Dissipation
Pd
536
;
6
 
mW
Operating
Temperature Range
T
opr
 
-40^+85

Storage
Temperature Range
T
stg
 
-40^+125

;5. Not to exceed Pd
;6. Reduced by 5.36mW for each increase in Ta of 1 over 25
 
(mounted on 70mm?0mm?.6mm Glass-epoxy PCB)
 
螹agnetic, Electrical characteristics
BU52002GUL (Unless otherwise specified, V
DD
=3.0V, Ta=25)
Parameter
Symbol
Limits
Unit
Conditions
Min.
Typ.
Max.
Power Supply Voltage
V
DD
 
2.4
3.0
3.3
V
 
Operate Point
B
opS
 
-
3.7
5.5
mT     
Release Point
B
rpS
 
0.8
2.9
-
mT     
Hysteresis
B
hysS
 
-
0.8
-
mT     
Period
T
P
 
-
50
100
ms
 
Output High Voltage
V
OH
 
V
DD
-0.4
-
-
V
B
rpS
;
7
 
I
OUT
=-1.0mA
Output Low Voltage
V
OL
 
-
-
0.4
V
B
opS
<B
;
7
 
I
OUT
 =+1.0mA
Supply Current
I
DD(AVG)
 
-
6.5
9
礎(chǔ)
Average
Supply Current
During Startup Time
I
DD(EN)
 
-
4.7
-
mA     During Startup Time Value
Supply Current
During Standby Time
I
DD(DIS)
 
-
3.8
-
礎(chǔ)
During Standby Time Value
;7. B = Magnetic flux density
 
1mT=10Gauss
 
Positive (+) polarity flux is defined as the magnetic flux from south pole which is direct toward to the branded face of the sensor.
 
After applying power supply, it takes one cycle of period (T
P
) to become definite output.
 
Radiation hardiness is not designed.
相關(guān)PDF資料
PDF描述
BU52014HFV-TR IC HALL EFFECT SW BIPO HVSOF5
BU52040HFV-TR IC HALL EFFECT BIPO LATCH HVSOF5
D6B-2P SENSR TILT 35-65DEG 1MA SMD GUL
D7E-3 SENSOR TILT 50-80DEG 0.1A GRY
DSBA1H SENSOR TILT SW 30-60DEG 20MA TH
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU52004GUL 制造商:ROHM 制造商全稱:Rohm 功能描述:Hall effect Switch
BU52004GUL_10 制造商:ROHM 制造商全稱:Rohm 功能描述:Omnipolar Detection Hall ICs (Polarity detection for both S and N features dual outputs)
BU52004GUL-E2 功能描述:板機(jī)接口霍耳效應(yīng)/磁性傳感器 Magnetic Sensor 2.4-3.3V; 50mS RoHS:否 制造商:Honeywell 類型:Bipolar Hall-Effect Digital Position Sensor 工作電源電壓:3 V to 24 V 電源電流:3.5 mA 最大輸出電流:20 mA 工作點(diǎn)最小值/最大值:5 G, 55 G 最小/最大釋放點(diǎn)(Brp):- 55 G, - 5 G 最大工作溫度:+ 150 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:SOT-23
BU-5200-A-4-0 功能描述:測試引線 Black BNC Female Bre RoHS:否 制造商:Pomona Electronics 設(shè)備類型:Patch Cords 連接器類型:Banana plug (stackable) on both ends 長度:60 in 顏色:Black
BU52011HFV 制造商:ROHM Semiconductor 功能描述:Hole IC,Bop=+/-3.0mT,CMOSout,HVSOF5