參數(shù)資料
型號(hào): BU506F
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220
封裝: PLASTIC PACKAGE-3
文件頁數(shù): 8/12頁
文件大?。?/td> 83K
代理商: BU506F
1997 Aug 14
7
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
PACKAGE OUTLINE
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
EIAJ
SOT186
TO-220
0
5
10 mm
scale
Plastic single-ended package; isolated heatsink mounted;
1 mounting hole; 3 lead TO-220 exposed tabs
SOT186
A
A1
Q
c
Note
1. Terminal dimensions within this zone are uncontrolled. Terminals in this zone are not tinned.
D
D1
L
L2
L1
m
q
e1
e
b
w
M
1
2
3
E1
P
E
b1
UNIT
D
b1
D1
e
q
Q
P
L
c
L2
e1
A
5.08
mm
4.4
4.0
A1
2.9
2.5
b
0.9
0.7
1.5
1.3
0.55
0.38
17.0
16.4
7.9
7.5
E
10.2
9.6
5.7
5.3
E1
2.54
14.3
13.5
10
0.4
L1
(1)
4.8
4.0
1.4
1.2
4.4
4.0
w
3.2
3.0
m
0.9
0.5
DIMENSIONS (mm are the original dimensions)
97-06-11
相關(guān)PDF資料
PDF描述
BU506DF Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
BU506 Silicon diffused power transistors
BU506D Silicon diffused power transistors
BU5071
BU508AD TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC
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