- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄369553 > BU506F (NXP SEMICONDUCTORS) Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) PDF資料下載
參數(shù)資料
| 型號(hào)： | BU506F |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC PACKAGE-3 |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 83K |
| 代理商： | BU506F |
1997 Aug 14
1
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU506F; BU506DF
DESCRIPTION
High-voltage, high-speed switching
NPN power transistor in a SOT186
package. The BU506DF has an
integrated efficiency diode.
APPLICATIONS
Horizontal deflection circuits of
colour television receivers
Line-operated switch-mode
applications.
PINNING
PIN
(1)
DESCRIPTION
1
2
3
base
collector
emitter
Note
1.
All pins electrically isolated from mounting base.
Fig.1 Simplified outline (SOT186) and symbols.
MBC668
1
2
3
Front view
3
2
1
MBB077
3
2
1
MBB008
a. BU506F.
b. BU506DF.
QUICK REFERENCE DATA
THERMAL CHARACTERISTICS
Notes
1.
2.
Mounted
without
heatsink compound and 30
±
5 N force on centre of package.
Mounted
with
heatsink compound and 30
±
5 N force on centre of package.
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
CESM
V
CEO
V
CEsat
V
F
I
Csat
I
C
I
CM
P
tot
t
f
collector-emitter peak voltage
collector-emitter voltage
collector-emitter saturation voltage
diode forward voltage (BU506DF)
collector saturation current
collector current (DC)
collector current (peak value)
total power dissipation
fall time
V
BE
= 0
open base
I
C
= 3 A; I
B
= 1.33 A; see Figs 7 and 8
I
F
= 3 A
1.5
0.7
1500
700
1
2.2
3
5
8
20
V
V
V
V
A
A
A
W
μ
s
see Figs 2 and 3
see Figs 2 and 3
T
h
≤
25
°
C; see Fig.4
inductive load; see Fig.11
SYMBOL
PARAMETER
CONDITIONS
VALUE
UNIT
R
th j-h
thermal resistance from junction to external heatsink note 1
6.35
3.85
55
K/W
K/W
K/W
note 2
R
th j-a
thermal resistance from junction to ambient
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU506DF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU506 | Silicon diffused power transistors |
| BU506D | Silicon diffused power transistors |
| BU5071 | |
| BU508AD | TRANSISTOR | BJT | NPN | 700V V(BR)CEO | 8A I(C) | TO-218AC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU-507 | 制造商:Thomas & Betts 功能描述: |
| BU-5070-B-12-0 | 功能描述:測(cè)試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類(lèi)型:Patch Cords 連接器類(lèi)型:Banana plug (stackable) on both ends 長(zhǎng)度:60 in 顏色:Black |
| BU-5070-B-24-0 | 功能描述:測(cè)試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類(lèi)型:Patch Cords 連接器類(lèi)型:Banana plug (stackable) on both ends 長(zhǎng)度:60 in 顏色:Black |
| BU-5070-B-36-0 | 功能描述:測(cè)試引線 Black BNC Male to St RoHS:否 制造商:Pomona Electronics 設(shè)備類(lèi)型:Patch Cords 連接器類(lèi)型:Banana plug (stackable) on both ends 長(zhǎng)度:60 in 顏色:Black |
| BU-5070-B36-0 | 制造商:Mueller Electric Company 功能描述:Cable Assembly Coaxial 0.9m BNC to 1 POS Banana M-M/M |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。