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參數(shù)資料
| 型號： | BU505DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon diffused power transistors |
| 中文描述： | 2.5 A, 700 V, NPN, Si, POWER TRANSISTOR, TO-220 |
| 封裝： | PLASTIC, TO-220, 3 PIN |
| 文件頁數(shù)： | 4/12頁 |
| 文件大?。?/td> | 81K |
| 代理商： | BU505DF |
1997 Aug 13
4
Philips Semiconductors
Product specification
Silicon diffused power transistors
BU505F; BU505DF
CHARACTERISTICS
T
j
= 25
°
C unless otherwise specified.
Note
1.
Measured with a half-sinewave voltage (curve tracer).
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
V
CEOsust
collector-emitter sustaining voltage I
C
= 0.1 A; I
B
= 0; L = 25 mH;
see Figs 6 and 7
I
C
= 2 A; I
B
= 900 mA;
see Fig.8
I
C
= 2 A; I
B
= 900 mA;
see Fig.9
I
F
= 2 A
V
CE
= V
CESmax
; V
BE
= 0;
note 1
V
CE
= V
CESmax
; V
BE
= 0;
T
j
= 125
°
C; note 1
V
EB
= 5 V; I
C
= 0
see Fig.3
V
CE
= 5 V; I
C
= 2 A
V
CE
= 5 V; I
C
= 100 mA
V
CE
= 5 V; I
C
= 100 mA;
f = 1 MHz
V
CB
= 10 V; I
E
= i
e
= 0;
f = 1 MHz
700
V
V
CEsat
collector-emitter saturation voltage
1
V
V
BEsat
base-emitter saturation voltage
1.3
V
V
F
I
CES
diode forward voltage (BU505DF)
collector-emitter cut-off current
1.8
0.15
V
mA
1
mA
I
EBO
h
FE
emitter-base cut-off current
DC current gain
1
mA
2.22
6
13
7
30
f
T
transition frequency
MHz
C
c
collector capacitance
65
pF
Switching times in horizontal deflection circuit
(see Fig.4)
t
s
storage time
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
4 V
L
B
= 10
μ
H
L
B
= 15
μ
H
L
B
= 25
μ
H
I
CM
= 2 A; I
B(end)
= 900 mA;
V
dr
=
4 V
L
B
= 10
μ
H
L
B
= 15
μ
H
L
B
= 25
μ
H
6.5
7.5
9.5
μ
s
μ
s
μ
s
t
f
fall time
0.9
0.9
0.85
μ
s
μ
s
μ
s
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU505F | Silicon diffused power transistors |
| BU505 | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU505D | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU506F | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU506DF | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU505DF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU505F | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU506 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon diffused power transistors |
| BU-506 | 制造商:Thomas & Betts 功能描述: |
| BU506-1 | 制造商:Thomas & Betts 功能描述:2 BUSHING,RGD/IMC,NM,INSUL,EA |
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