參數(shù)資料
型號: BU505
廠商: 意法半導(dǎo)體
英文描述: High Voltage NPN Multiepitaxial Fast-Switching Transistor(高壓快速開關(guān)NPN晶體管)
中文描述: 高壓npn型Multiepitaxial快速開關(guān)晶體管(高壓快速開關(guān)npn型晶體管)
文件頁數(shù): 2/4頁
文件大?。?/td> 61K
代理商: BU505
THERMAL DATA
R
thj-case
Thermal Resistance Junction-case Max
1.67
o
C/W
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
CES
Collector Cut-off
Current (V
BE
= 0)
V
CE
= V
CES
V
CE
= V
CES
T
case
= 125
o
C
0.15
1
mA
mA
I
EBO
Emitter Cut-off Current
(I
C
= 0)
Collector-emitter
Sustaining Voltage
Collector-emitter
Saturation Voltage
Base-emitter
Saturation Voltage
Second Breakdown
Current
Storage Time
V
EB
= 5 V
1
mA
V
CEO(sus)
I
C
= 100 mA L = 25mH
700
V
V
CE(sat)
I
C
= 2 A I
B
= 0.9 A
5
V
V
BE(sat)
I
C
= 2 A I
B
= 0.9 A
1.3
V
I
s/b
V
CE
= 120 V t = 200
μ
s
2
A
t
s
V
Clamp
= 250V I
C
= 2 A
I
B1
= 0.7 A V
be(off)
= -5V
R
bb
= 0 L = 200
μ
H
2
350
μ
s
ns
Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %.
BU505
2/4
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