參數(shù)資料
型號(hào): BU806FI
廠商: 意法半導(dǎo)體
英文描述: Medium Voltage NPN Fast Switching Darlington Transistor(NPN快速開(kāi)關(guān)達(dá)林頓晶體管)
中文描述: 中壓npn型快速開(kāi)關(guān)達(dá)林頓晶體管(npn型快速開(kāi)關(guān)達(dá)林頓晶體管)
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 47K
代理商: BU806FI
BU806/BU806FI
BU807
MEDIUM VOLTAGE NPN FAST SWITCHING
DARLINGTON TRANSISTOR
I
SGS-THOMSON PREFERRED SALESTYPES
I
NPN DARLINGTON
I
LOW BASE-DRIVEREQUIREMENTS
I
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
APPLICATION
I
HORIZONTAL DEFLECTION FOR
MONOCHROME TVs
DESCRIPTION
The BU806, BU807 and BU806FI
epitaxial
planar
Darlington
configuration
base-emitter
speed-up
respectively in TO-220 plastic package and
ISOWATT220fully isolated package.
They can be used in horizontal output stages of
110
o
CRT video displays.
are silicon
transistors
with
integrated
diode,
NPN
power
in
mounted
INTERNAL SCHEMATIC DIAGRAM
June 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BU806 / BU806FI
400
400
200
BU807
330
330
150
V
CBO
V
CEV
V
CEO
V
EBO
I
C
I
CM
I
DM
I
B
Collector-base Voltage (I
E
= 0)
Collector-emitter Voltage (V
BE
= -6V)
Collector-emitter Voltage (I
B
= 0)
Emitter-Base Voltage (I
C
= 0)
Collector Current
Collector Peak Current
Damper Diode Peak Forward Current
Base Current
V
V
V
V
A
A
A
6
8
15
10
2
TO-220
60
ISOWATT220
30
A
W
o
C
o
C
P
tot
T
stg
T
j
Total Power Dissipation at T
case
<
25
o
C
Storage Temperature
Max Operating Junction Temperature
-65 to 150
150
1
2
3
TO-220
ISOWATT220
1
2
3
1/5
相關(guān)PDF資料
PDF描述
BU806 Medium Voltage NPN Fast Switching Darlington Transistor(NPN快速開(kāi)關(guān)達(dá)林頓晶體管)
BU807 Medium Voltage NPN Fast Switching Darlington Transistor(NPN快速開(kāi)關(guān)達(dá)林頓晶體管)
BU810 Medium Voltage NPN Fast-Switching Darlington Transistor(快速開(kāi)關(guān)達(dá)林頓晶體管)
BU911 Medium Voltage NPN Ignition Darlington(NPN達(dá)林頓晶體管)
BU920 HIGH VOLTAGE POWER DISSIPATION
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