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參數(shù)資料
| 型號： | BU4530AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BU4530AX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 10 A; I
B
= 2.5 A
I
C
= 10 A; I
B
= 2.5 A
I
C
= 1A; V
= 5 V
I
C
= 10 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
800
14
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
3.0
1.1
-
6.5
V
V
t.b.f
-
4.2
t.b.f
5.35
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (32 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (90 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 10 A;I
B1
= 2 A;(I
B2
= -5 A)
TYP.
145
MAX.
-
UNIT
pF
t.b.f
t.b.f
t.b.f
t.b.f
μ
s
μ
s
I
Csat
= 8 A;I
B1
= 1.6 A;(I
B2
= -4.8 A)
t.b.f
t.b.f
t.b.f
t.b.f
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
January 1998
2
Rev 1.000
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