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參數(shù)資料
| 型號： | BU4530AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 16 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, FULL PACK-3 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 22K |
| 代理商： | BU4530AX |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4530AX
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor in a plastic full pack
envelope intended for use in horizontal deflection circuits of colour television receivers and p.c monitors. Features
exceptional tolerance to base drive and collector current load variations resulting in a very low worst case
dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
10
8.0
t.b.f
t.b.f
MAX.
1500
800
16
40
45
3.0
-
-
t.b.f
t.b.f
UNIT
V
V
A
A
W
V
A
A
μ
s
μ
s
T
hs
≤
25 C
I
= 10 A; I
B
= 2.5 A
f = 32kHz
f = 90kHz
I
Csat
= 10.0 A; f = 32kHz
I
Csat
= 8.0 A; f = 90kHz
t
f
Fall time
PINNING - SOT399
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
16
40
10
15
10
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
case
1 2 3
b
c
e
1
Turn-off current.
January 1998
1
Rev 1.000
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
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