參數(shù)資料
型號: BU4525AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁數(shù): 4/6頁
文件大?。?/td> 60K
代理商: BU4525AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
Fig.9. Typical base-emitter saturation voltage.
Fig.10. Typical collector storage and fall time.
I
C
=9 A; T
j
= 85C; f = 16kHz
Fig.11. Normalised power dissipation.
PD% = 100
P
D
/P
D 25C
Fig.12. Transient thermal impedance.
Fig.13. I
during normal running vs. frequency of
operation for optimum performance
0
1
2
3
4
0.6
0.7
0.8
0.9
1
1.1
1.2
IC = 9 A
IC = 7 A
Ths = 25 C
Ths = 85 C
BU4525AF/X/W
IB / A
VBEsat / V
1.0E-07
1E-05
1E-03
t / s
1E-01
1E+01
0.001
0.01
0.1
1
10
0.2
0.1
0.05
0.02
0.5
bu4525aw
Zth K/W
D =
t
p
t
p
T
T
P
D
t
0
1
2
3
4
0
2
4
6
8
10
ICsat = 9 A
Ths = 85 C
Freq = 16 kHz
ts
tf
IB / A
ts/tf / us
0
20
60
80
100
0
2
4
6
8
10Ic(sat) (A)
Fr40
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
May 1998
4
Rev 1.000
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BU4525DX 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor