參數(shù)資料
型號: BU4525AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴散功率型晶體管)
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁數(shù): 2/6頁
文件大?。?/td> 60K
代理商: BU4525AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU4525AW
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6.0 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 9.0 A;I
B
= 2.25A
I
C
= 1.0 A; V
CE
= 5 V
I
C
= 9.0 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
100
-
-
μ
A
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.06
-
7.6
V
V
0.96
-
4.2
1.01
12
5.8
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (70 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 9.0 A;I
B1
= 1.8 A
(I
B2
= -4.5 A)
TYP.
145
MAX.
-
UNIT
pF
3.7
0.4
4.5
0.55
μ
s
μ
s
I
Csat
= 7.0 A;I
B1
= 1.4 A
(I
B2
= -4.5 A)
2
-
-
μ
s
μ
s
0.15
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
May 1998
2
Rev 1.000
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