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參數(shù)資料
| 型號： | BU4522DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 10 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 20K |
| 代理商： | BU4522DF |
Philips Semiconductors
Objective specification
Silicon Diffused Power Transistor
BU4522DF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
-
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 7 A; I
B
= 1.75 A
I
C
= 7 A; I
B
= 1.75 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 7 A; V
CE
= 5 V
I
F
= 7 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
BV
EBO
R
be
V
CEOsust
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
7.5
-
800
13.5
50
-
-
-
-
V
V
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
3.0
1.03
-
7.3
2.2
V
V
0.85
-
4.2
-
0.94
10
5.8
-
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (16 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (64 kHz line
deflection circuit)
t
s
Turn-off storage time
t
f
Turn-off fall time
CONDITIONS
f = 16 kHz; I
Csat
= 7 A; I
B1
= 1.4 A;
(I
B2
= -3.5 A)
TYP.
MAX.
UNIT
3.5
285
4.3
400
μ
s
ns
f = 64 kHz;
t.b.f
t.b.f
t.b.f
t.b.f
μ
s
ns
2
Measured with half sine-wave voltage (curve tracer).
July 1998
2
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU4522DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU4523DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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