參數(shù)資料
型號: BU2727AW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
中文描述: 12 A, 825 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁數(shù): 2/7頁
文件大?。?/td> 69K
代理商: BU2727AW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
-
in free air
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 0.1 A; V
= 5 V
I
C
= 5 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
825
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
1.0
0.95
35
11
V
V
0.78
12
5.5
0.86
22
8
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
CM
= 5.0 A; L
C
= 260
μ
H; C
fb
= 4.8 nF;
V
CC
= 180 V; I
B(end)
= 0.9 A;
L
= 0.6
μ
H; -V
= 2 V;
(-dI
B
/dt = 3.33 A/
μ
s)
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
2.2
tbf
tbf
tbf
μ
s
μ
s
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
100R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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