- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄369550 > BU2727AW (NXP SEMICONDUCTORS) POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% PDF資料下載
參數(shù)資料
| 型號： | BU2727AW |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| 中文描述： | 12 A, 825 V, NPN, Si, POWER TRANSISTOR, TO-247 |
| 封裝： | PLASTIC, SOT-429, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 69K |
| 代理商： | BU2727AW |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AW
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection
circuits of high resolution monitors, suitable for operation up to 64 kHz. Designed to withstand V
CES
pulses up to
1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.0
2.2
MAX.
1700
825
12
30
125
1.0
-
tbf
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
C
B
= 0.91 A
I
CM
= 5.0 A; I
B(end)
= 0.9 A
PINNING - SOT429
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
12
30
12
25
200
25
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
mb
≤
25 C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
1.5 k
)
2
3
1
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU2727AX | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BU2727A | Silicon Diffused Power Transistor |
| BU2730AL | Silicon Diffused Power Transistor |
| BU2730 | Silicon Diffused Power Transistor |
| BU2730S | Consumer IC |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2727AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2727DF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2727DX | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2728K | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC |
| BU2730 | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。