參數(shù)資料
型號(hào)： BU2727AF
廠商： NXP SEMICONDUCTORS
元件分類(lèi)： 功率晶體管
英文描述： INNOLINE: High Voltage Output Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 86%
中文描述： 12 A, 825 V, NPN, Si, POWER TRANSISTOR
封裝： PLASTIC, SOT-199, 3 PIN
文件頁(yè)數(shù)： 2/7頁(yè)
文件大?。?/td> 65K
代理商： BU2727AF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2727AF
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 5.0 A; I
B
= 0.91 A
I
C
= 0.1 A; V
= 5 V
I
C
= 5 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
1.0
-
-
mA
V
V
7.5
825
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
-
-
1.0
1.0
-
11
V
V
22
8
5.5
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
Csat
= 5.0 A; L
C
= 260
μ
H;
C
fb
= 4.8 nF; V
CC
= 180 V;
I
= 0.9 A; L
B
= 0.6
μ
H; -V
BB
= 2 V;
(-dI
B
/dt = 3.33 A/
μ
s)
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
2.5
0.30
3.0
0.39
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
相關(guān)PDF資料
PDF描述
BU2727AW POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BU2727AX POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
BU2727A Silicon Diffused Power Transistor
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
BU2727AW 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2727AX 制造商:PHILIPS 制造商全稱(chēng):NXP Semiconductors 功能描述:Silicon Diffused Power Transistor
BU2727DF 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors
BU2727DX 制造商:ISC 制造商全稱(chēng):Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor
BU2728K 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:Consumer IC
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