參數(shù)資料
型號(hào): BU2725DX
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管)
中文描述: 12 A, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-399, 3 PIN
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 66K
代理商: BU2725DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725DX
Fig.1. Switching times waveforms (16 kHz).
Fig.2. Switching times definitions.
Fig.3. Switching times test circuit.
Fig.4. DC current gain. h
FE
= f (I
C
)
Parameter T
(Low and high gain)
IC
IB
VCE
ICsat
IBend
64us
26us
20us
t
t
t
TRANSISTOR
DIODE
+ 150 v nominal
adjust for ICsat
Lc
Cfb
D.U.T.
LB
IBend
-VBB
Rbe
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
BU2727D/DF
0.01
0.1
1
10
100
1
10
100
hFE
IC / A
VCE = 5 V
Ths = 25 C
Ths = 85 C
September 1997
3
Rev 1.100
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BU2727AF INNOLINE: High Voltage Output Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 86%
BU2727AW POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86%
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