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參數資料
| 型號： | BU2725AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 12 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數： | 4/7頁 |
| 文件大?。?/td> | 67K |
| 代理商： | BU2725AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2725AF
Fig.7. DC current gain. h
FE
= f (I
C
)
Parameter T
(Low and high gain)
Fig.8. Typical collector-emitter saturation voltage.
V
CEsat
= f (I
C
); parameter I
C
/I
B
Fig.9. Typical base-emitter saturation voltage.
V
BEsat
= f (I
B
); parameter I
C
Fig.10. Limit storage and fall time.
t
s
= f (I
B
); tf = f (I
B
); T
hs
= 85C; f = 16 kHz
Fig.11. Normalised power dissipation.
PD% = 100
PD/PD 25C = f (T
hs
)
Fig.12. Transient thermal impedance.
Z
th
j-hs
= f(t); parameter D = t
p
/T
0.01
0.1
1
10
100
1
10
100
hFE
BU2727A/AF
IC / A
VCE = 1 V
Ths = 25 C
Ths = 85 C
0
1
2
3
4
0
1
2
3
4
5
6
7
8
9
10
IB / A
ts/tf/ us
BU2527AFX,DFX
0.1
1
10
100
0.01
0.1
1
10
BU2727A/AF
VCEsat / V
Ths = 85 C
Ths = 25 C
IC/IB = 12
IC/IB = 5
IC / A
0
20
40
60
80
100
120
140
Ths / C
PD%
Normalised Power Derating
120
110
100
90
80
70
60
50
40
30
20
10
0
with heatsink compound
0
1
2
3
4
0.6
0.7
0.8
0.9
1
VBEsat / V
BU2727A/AF
IB / A
IC = 6 A
4 A
Ths = 85 C
Ths = 25 C
1E-06
1E-04
1E-02
t / s
1E+00
Zth / (K/W)
BU2525AF
10
1
0.1
0.01
0.001
D =
t
p
t
p
T
T
P
D
t
D = 0
0.02
0.05
0.1
0.2
0.5
September 1997
4
Rev 1.300
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PDF描述 |
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| BU2727AF | INNOLINE: High Voltage Output Series - For Telecom DSM, XDSL, Aplication- Internal Pi Filter- Multi-Outputs- Overcurrent Protection- High Efficiency to 86% |
| BU2727AW | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BU2727AX | POWERLINE: RP20-S_D_TE - 2:1 Wide Input Voltage Range- 20 Watts Output Power- 1.6kVDC Isolation- Fixed Operating Frequency- Six-Sided Continuous Shield- International Safety Standard Approvals- Ul 1950 Component Recognised- Standard 50.8 x40.6x10.2mm Package- Efficiency to 86% |
| BU2727A | Silicon Diffused Power Transistor |
| BU2730AL | Silicon Diffused Power Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU2725DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2725DW | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2725DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2727A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2727AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
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