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參數(shù)資料
| 型號： | BU2708DF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 72K |
| 代理商： | BU2708DF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708DF
GENERAL DESCRIPTION
High voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope.
Intended for use in horizontal deflection circuits of colour television receivers. Features exceptional tolerance to
base drive and collector current load variations resulting in a low worst case dissipation. Designed to withstand V
CES
pulses up to 1700V.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
4.0
1.6
4.8
MAX.
1700
825
8
15
45
1.0
-
-
5.5
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
≤
25 C
I
= 4 A; I
B
= 1.33 A
f = 16 kHz
I
F
= 4.0 A
I
Csat
= 4 A; f = 16 kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-65
-
MAX.
1700
825
8
15
4
6
5
45
150
150
UNIT
V
V
A
A
A
A
A
W
C
C
T
hs
≤
25 C
ESD LIMITING VALUES
SYMBOL
V
C
PARAMETER
Electrostatic discharge capacitor voltage Human body model (250 pF,
CONDITIONS
MIN.
-
MAX.
10
UNIT
kV
1.5 k
)
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.400
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| BU2708DX | Silicon Diffused Power Transistor |
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| BU2710S | Consumer IC |
| BU2720AF | Silicon Diffused Power Transistor |
| BU2720AX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2708DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2710F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC |
| BU2710S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC |
| BU-27135-000 | 功能描述:麥克風 7.92 X 5.59 X 2.28MM -45 20hz to 10Khz RoHS:否 制造商:Knowles Acoustics 方向性:Omnidirectional 阻抗:4.4 K Ohms 工作電壓:0.9 V to 10 V 靈敏度:- 53 dB 端接類型:Wire Leads 長度:5.56 mm 寬度:3.98 mm 深度:2.21 mm |
| BU-27135-141 | 功能描述:ACCELEROMETER 制造商:knowles 系列:BU 零件狀態(tài):有效 傳感器類型:振動，加速 感應范圍:- 靈敏度:-45dB ±4.5dB 輸出類型:電壓 功率 - 額定值:- 工作溫度:- 特性:防水 封裝/外殼:陶瓷 安裝類型:用戶自定義 端接:焊接接線柱 標準包裝:25 |
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