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參數(shù)資料
| 型號(hào)： | BU2708AX |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 8 A, 825 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-399, 3 PIN |
| 文件頁數(shù)： | 2/7頁 |
| 文件大?。?/td> | 76K |
| 代理商： | BU2708AX |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2708AX
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to heatsink
Junction to ambient
CONDITIONS
without heatsink compound
with heatsink compound
in free air
TYP.
-
-
35
MAX.
3.7
2.8
-
UNIT
K/W
K/W
K/W
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 6 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 4 A; I
B
= 1.33 A
I
C
= 4 A; I
= 1.33 A
I
C
= 100 mA; V
= 5 V
I
C
= 4 A; V
CE
= 1 V
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
70
-
-
μ
A
V
V
7.5
825
13.5
900
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
1.0
1.00
-
7.3
V
V
0.83
-
3
0.91
21
6
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (line deflection
circuit 16 kHz)
CONDITIONS
I
Csat
= 4 A; I
= 0.8 A; -I
= I
/2;
L
B
= 6
μ
H; -V
BB
= 4 V; L
C
= 1 mH;
C
FB
= 12.2 nF
TYP.
MAX.
UNIT
t
s
t
f
Turn-off storage time
Turn-off fall time
4.8
0.4
5.5
0.52
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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| BU2708DF | Silicon Diffused Power Transistor |
| BU2708DX | Silicon Diffused Power Transistor |
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| BU2710S | Consumer IC |
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2708DF | 制造商:SAVANTIC 制造商全稱:Savantic, Inc. 功能描述:Silicon NPN Power Transistors |
| BU2708DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2710F | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC |
| BU2710S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Consumer IC |
| BU-27135-000 | 功能描述:麥克風(fēng) 7.92 X 5.59 X 2.28MM -45 20hz to 10Khz RoHS:否 制造商:Knowles Acoustics 方向性:Omnidirectional 阻抗:4.4 K Ohms 工作電壓:0.9 V to 10 V 靈敏度:- 53 dB 端接類型:Wire Leads 長(zhǎng)度:5.56 mm 寬度:3.98 mm 深度:2.21 mm |
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