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參數(shù)資料
| 型號(hào)： | BU2527AF |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | PLASTIC, SOT-199, 3 PIN |
| 文件頁(yè)數(shù)： | 2/7頁(yè) |
| 文件大小： | 70K |
| 代理商： | BU2527AF |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2527AF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
≤
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 1 mA
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 6 A; V
CE
= 5 V
MIN.
-
-
TYP.
-
-
MAX.
0.25
2.0
UNIT
mA
mA
I
BV
EBO
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Collector-emitter sustaining voltage
-
-
0.25
-
-
mA
V
V
7.5
800
13.5
-
V
CEsat
V
BEsat
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
5.0
1.3
-
9
V
V
10
7
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 6.0 A; L
C
= 170
μ
H;
C
fb
= 5.4 nF; I
B(end)
= 0.55 A;
L
= 0.6
μ
H; -V
= 2 V;
(-dI
B
/dt = 3.33 A/
μ
s)
TYP.
145
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
1.7
0.1
2.0
0.2
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU2527AW | Silicon Diffused Power Transistor |
| BU2527AX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU2527A | Silicon Diffused Power Transistor |
| BU2527DF | Silicon Diffused Power Transistor |
| BU2527DX | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2527AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199 |
| BU2527AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2527AW/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2527AX | 制造商:PHILIPS-SEMI 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| BU2527DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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