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參數資料
| 型號： | BU2527A |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 12 A, 800 V, NPN, Si, POWER TRANSISTOR |
| 文件頁數： | 1/7頁 |
| 文件大?。?/td> | 54K |
| 代理商： | BU2527A |
Philips Semiconductors
Preliminary specification
Silicon Diffused Power Transistor
BU2527A
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in
horizontal deflection circuits of high resolution monitors. Features improved RBSOA performance and is suitable for
operation up to 64 kHz.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
s
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Storage time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
6.0
1.7
MAX.
1500
800
12
30
125
5.0
-
2.0
UNIT
V
V
A
A
W
V
A
μ
s
T
mb
≤
25 C
I
C
B
= 1.2 A
I
CM
= 6.0 A; I
B(end)
= 0.55 A
PINNING - SOT93
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
tab
collector
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
800
12
30
8
12
200
7
125
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
mb
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-mb
R
th j-a
PARAMETER
Junction to mounting base
Junction to ambient
CONDITIONS
TYP.
-
45
MAX.
1.0
-
UNIT
K/W
K/W
in free air
1
2
3
tab
b
c
e
1
Turn-off current.
November 1995
1
Rev 1.100
相關PDF資料 |
PDF描述 |
|---|---|
| BU2527DF | Silicon Diffused Power Transistor |
| BU2527DX | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU2530AL | Silicon Diffused Power Transistor |
| BU2530AW | Silicon Diffused Power Transistor(硅擴散功率型晶體管) |
| BU2532AL | Silicon Diffused Power Transistor |
相關代理商/技術參數 |
參數描述 |
|---|---|
| BU2527AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistors |
| BU2527AF/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR ISOLATED SOT199 |
| BU2527AW | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2527AW/B | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TRANSISTOR LEISTUNGS BIPOLAR |
| BU2527AX | 制造商:PHILIPS-SEMI 功能描述: 制造商:SANYO Semiconductor Co Ltd 功能描述:12 A, 800 V, NPN, Si, POWER TRANSISTOR |
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