參數(shù)資料
型號(hào): BU2525DW
廠商: NXP SEMICONDUCTORS
元件分類: 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 12 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-247
封裝: PLASTIC, SOT-429, 3 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 74K
代理商: BU2525DW
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2525DW
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
EB
= 6.0 V; I
C
= 0 A
V
= 6.0 V
I
B
= 600 mA
I
= 0A;I
= 100mA;
L= 25 mH
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 8.0 A; I
B
= 1.6 A
I
C
= 1 A; V
CE
= 5 V
I
C
= 8 A; V
CE
= 5 V
I
F
= 8 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
EBO
R
EB
BV
EBO
V
CEOsust
Emitter cut-off current
Base-emitter resistance
Emitter-base breakdown voltage
Collector emitter-sustaining voltage
72
-
7.5
800
110
55
13.5
-
218
-
-
-
mA
V
V
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
5.0
1.1
-
9.5
2.0
V
V
11
7
1.6
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (32 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
Csat
= 8.0 A; L
C
= 260
μ
H; C
fb
= 13 nF;
I
= 1.1 A; L
B
= 2.5
μ
H; -V
BB
= 4 V;
(-dI
B
/dt = 1.6 A/
μ
s)
TYP.
145
MAX.
-
UNIT
pF
t
s
t
f
V
fr
Turn-off storage time
Turn-off fall time
Anti-parallel diode forward recovery
voltage
Anti-parallel diode forward recovery
time
3.0
0.2
16
4.0
0.35
μ
s
μ
s
V
I
F
= 8 A; dI
F
/dt = 50 A/
μ
s
t
fr
V
F
= 5 V
410
ns
Fig.1. Switching times waveforms.
Fig.2. Switching times definitions.
IC
IB
VCE
I
Csat
IBend
32us
13us
10us
t
t
t
TRANSISTOR
DIODE
ICsat
90 %
10 %
tf
ts
IBend
IC
IB
t
t
- IBM
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.100
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