參數(shù)資料
型號(hào): BU2522DF
廠(chǎng)商: NXP SEMICONDUCTORS
元件分類(lèi): 功率晶體管
英文描述: Silicon Diffused Power Transistor
中文描述: 10 A, 800 V, NPN, Si, POWER TRANSISTOR
封裝: PLASTIC, SOT-199, 3 PIN
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 78K
代理商: BU2522DF
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2522DF
ISOLATION LIMITING VALUE & CHARACTERISTIC
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
V
isol
Repetitive peak voltage from all
three terminals to external
heatsink
C
isol
Capacitance from T2 to external f = 1 MHz
heatsink
CONDITIONS
R.H.
65 % ; clean and dustfree
MIN.
-
TYP.
MAX.
2500
UNIT
V
-
22
-
pF
STATIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
2
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
CESMmax
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 7.5 V; I
C
= 0 A
I
B
= 600 mA
V
= 7.5 V
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 6.0 A; I
B
= 1.2 A
I
C
= 1.0 A; V
= 5 V
I
C
= 6 A; V
CE
= 5 V
I
F
= 6 A
MIN.
-
-
TYP.
-
-
MAX.
1.0
2.0
UNIT
mA
mA
I
BV
EBO
R
be
V
CEOsust
Emitter cut-off current
Emitter-base breakdown voltage
Base-emitter resistance
Collector-emitter sustaining voltage
-
150
13.5
50
-
-
-
-
-
mA
V
V
7.5
-
800
V
CEsat
V
BEsat
h
FE
h
FE
V
F
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
-
5
-
-
-
5.0
1.1
-
10
2.2
V
V
13
7
-
Diode forward voltage
V
DYNAMIC CHARACTERISTICS
T
hs
= 25 C unless otherwise specified
SYMBOL
PARAMETER
C
c
Collector capacitance
Switching times (64 kHz line
deflection circuit)
CONDITIONS
I
E
= 0 A; V
CB
= 10 V; f = 1 MHz
I
CM
= 6.0 A; L
= 170
μ
H; C
= 5.4 nF;
I
= 0.7 A; L
= 0.6
μ
H; -V
BB
= 2 V;
(-dI
B
/dt = 3.33 A /
μ
s)
TYP.
115
MAX.
-
UNIT
pF
t
s
t
f
Turn-off storage time
Turn-off fall time
1.7
0.12
2.0
0.25
μ
s
μ
s
2
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.200
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