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參數(shù)資料
| 型號(hào)： | BU2523 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | Inductor; Series:IHLP-2525CZ; Inductance:1.5uH; Inductance Tolerance:+/- 20 %; Terminal Type:PCB Surface Mount; Current Rating:9A; Leaded Process Compatible:Yes; Mounting Type:Surface Mount; Packaging:Tape And Reel |
| 中文描述： | 擴(kuò)散硅功率晶體管 |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大?。?/td> | 64K |
| 代理商： | BU2523 |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2523AF
GENERAL DESCRIPTION
New generation, high-voltage, high-speed switching npn transistor in a plastic full-pack envelope intended for use in
horizontal deflection circuits of HDTV receivers and pc monitors.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
5.5
0.15
MAX.
1500
800
11
29
45
5.0
-
0.3
UNIT
V
V
A
A
W
V
A
μ
s
T
hs
≤
25 C
I
= 5.5 A; I
B
= 1.1 A
f = 64 kHz
I
Csat
= 5.5 A; f = 64 kHz
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-55
-
MAX.
1500
800
11
29
7
10
175
7
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
≤
25 C
THERMAL RESISTANCES
SYMBOL
R
th j-hs
R
th j-a
PARAMETER
Junction to heatsink
Junction to ambient
CONDITIONS
with heatsink compound
in free air
TYP.
-
35
MAX.
2.8
-
UNIT
K/W
K/W
1
2
3
case
b
c
e
1
Turn-off current.
September 1997
1
Rev 1.100
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| BU2523AX | Silicon Diffused Power Transistor |
| BU2523DF | Silicon Diffused Power Transistor |
| BU2523DX | Silicon Diffused Power Transistor |
| BU2525AF | Silicon Diffused Power Transistor(硅擴(kuò)散功率型晶體管) |
| BU2525AW | INDUCTOR 1UH LOW PROFILE HIGH CURRENT |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BU2523AF | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:isc Silicon NPN Power Transistor |
| BU2523AX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2523DF | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2523DX | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
| BU2525A | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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