參數資料
型號: BTS660-P
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?9mOhm - Vbb(上)\u003d 5V的- 58V -的TO220 - 7 - 3?
文件頁數: 6/16頁
文件大小: 232K
代理商: BTS660-P
Data Sheet BTS660P
Parameter and Conditions
at
T
j
=
-40 ... +150
°C,
V
bb
=
24
V unless otherwise specified
Symbol
Values
typ
Unit
min
max
Infineon Technologies AG
Page 6
2001-May-30
Diagnostic Characteristics
Current sense ratio,
static on-condition,
k
ILIS
=
I
L
:
I
IS
,
V
ON
<
1.5
V
17)
,
V
IS
<
V
OUT
-
5 v,
V
bIN
>
4.0
V
see diagram on page 12
I
L
=
80
A,
T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
=
20
A,
T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
=
10
A,
T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
I
L
=
4
A,
T
j
=-40°C:
T
j
=25°C:
T
j
=150°C:
k
ILIS
11 400
11 400
11 000
11 000
11 000
11 000
10 500
10 500
11 000
9 000
10 000
10 800
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
13 000
15 400
14 600
14 200
16 000
15 000
14 500
17 000
15 500
15 000
22 000
18 500
16 000
I
IN
= 0, I
IS
=0
(e.g. during deenergizing of inductive loads)
:
Sense current saturation
Current sense leakage current
--
--
--
--
2
--
--
--
I
IS,lim
I
IS(LL)
I
IS(LH)
V
bIS(Z)
6.5
mA
μ
A
I
IN
=
0
V
IN
=
0,
I
L
<
0:
T
j
=-40°C:
T
j
=
25...+150°C:
--
--
0.5
--
--
--
Current sense overvoltage protection
I
bb
=
15
mA
Current sense settling time
18
)
68
70
--
72
--
V
t
s(IS)
500
μ
s
Input
Input and operating current (see diagram page 13)
IN grounded (V
IN
=
0)
Input current for turn-off
19)
I
IN(on)
--
0.8
1.5
mA
I
IN(off)
--
--
80
μ
A
17
)
If V
ON
is higher, the sense current is no longer proportional to the load current due to sense current
saturation, see
I
.
18
)Not tested, specified by design.
19
)We recommend the resistance between IN and GND to be less than 0.5
k
for turn-on and more than
500
k
for turn-off. Consider that when the device is switched off (I
IN
=
0) the voltage between IN and GND
reaches almost V
bb
.
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