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參數(shù)資料
| 型號： | BTS660-P |
| 元件分類： | TVS-瞬態(tài)抑制二極管 |
| 英文描述： | Transient Voltage Suppressor Diodes |
| 中文描述： | ？9mOhm - Vbb（上）\u003d 5V的- 58V -的TO220 - 7 - 3？ |
| 文件頁數(shù)： | 2/16頁 |
| 文件大?。?/td> | 232K |
| 代理商： | BTS660-P |
Data Sheet BTS660P
Infineon Technologies AG
Page 2
2001-May-30
Pin
Symbol
Function
1
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3
)
2
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
3
IN
I
Input, activates the power switch in case of short to ground
4
Vbb
+
Positive power supply voltage, the tab is electrically connected to this pin.
In high current applications the tab should be used for the V
bb
connection
instead of this pin
4
)
.
Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)
5
IS
S
6
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
7
OUT
O
Output to the load. The pins
1,2,6 and 7 must be shorted with each other
especially in high current applications!
3)
Maximum Ratings
at
T
j
= 25 °C unless otherwise specified
Parameter
Supply voltage
(overvoltage protection see page 4)
Supply voltage for full short circuit protection,
(E
AS
limitation see diagram on page 9)
Load current (short circuit current, see page 5)
Load dump protection
V
LoadDump
=
U
A
+
V
s
,
U
A
=
13.5
V
R
I
IN,
IS
= open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), T
C
≤
25 °C
Inductive load switch-off energy dissipation, single pulse
V
bb
=
12V,
T
j,start
=
150°C,
T
C
=
150°C const.,
I
L
=
20
A, Z
L
=
6
mH, 0
,
see diagrams on page 10
Electrostatic discharge capability (ESD)
Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 k
Current through input pin (DC)
Current through current sense status pin (DC)
see internal circuit diagrams on page 7 and 8
Symbol
V
bb
V
bb
Values
Unit
62
58
V
V
T
j,start
=-40 ...+150°C:
I
L
self-limited
A
5
)
=
2
,
R
L
=
0.23
,
t
d
=
200
ms,
V
Load dump
6
)
80
V
T
j
T
stg
P
tot
-40 ...+150
-55 ...+150
°C
170
W
E
AS
1.2
J
V
ESD
4.0
kV
I
IN
I
IS
+15
, -250
+15
, -250
mA
3
)
Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy
4
)
Otherwise add up to 0.7 m
(depending on used length of the pin) to the R
ON
if the pin is used instead of
the tab.
5
)
R
I
= internal resistance of the load dump test pulse generator.
6
)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| BTS660P E3180A | 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD RoHS:否 類別:集成電路 (IC) >> PMIC - MOSFET，電橋驅(qū)動器 - 內(nèi)部開關(guān) 系列:PROFET® 標(biāo)準(zhǔn)包裝:1,000 系列:- 類型:高端/低端驅(qū)動器 輸入類型:SPI 輸出數(shù):8 導(dǎo)通狀態(tài)電阻:850 毫歐，1.6 歐姆 電流 - 輸出 / 通道:205mA，410mA 電流 - 峰值輸出:500mA，1A 電源電壓:9 V ~ 16 V 工作溫度:-40°C ~ 150°C 安裝類型:表面貼裝 封裝/外殼:20-SOIC（0.295"，7.50mm 寬） 供應(yīng)商設(shè)備封裝:PG-DSO-20-45 包裝:帶卷 (TR) |
| BTS660PE3180A | 功能描述:電源開關(guān) IC - POE / LAN Smart High Side High Current PROFET RoHS:否 制造商:Fairchild Semiconductor 開關(guān)數(shù)量:Single 開關(guān)配置:SPST 開啟電阻（最大值）:7.3 Ohms 串話: 帶寬: 開啟時間（最大值）:13 ns 關(guān)閉時間（最大值）:20 ns 切換電壓（最大）: 工作電源電壓:8 V to 26 V 最大工作溫度:+ 125 C 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220F-6 |
| BTS660P-E3180A | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
| BTS660PE3180ANTMA1 | 制造商:Infineon Technologies AG 功能描述:IC SWITCH PWR HISIDE TO220-7 SMD |
| BTS660PE3180AT | 制造商:Infineon Technologies AG 功能描述:Power Switch Hi Side 38A 8-Pin(7+Tab) TO-220 SMD T/R |
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