參數(shù)資料
型號(hào): BTS282-Z
元件分類: TVS-瞬態(tài)抑制二極管
英文描述: Transient Voltage Suppressor Diodes
中文描述: ?N通道高速TEMPFET?
文件頁數(shù): 2/12頁
文件大?。?/td> 270K
代理商: BTS282-Z
2000-09-11
2
BTS 282 Z
Maximum Ratings
Parameter
Symbol
Value
Unit
Drain source voltage
V
DS
49
V
Drain-gate voltage
,
R
GS
= 20
k
Gate source voltage
V
DGR
V
GS
I
D(ISO)
49
20
36
52
Nominal load current (ISO 10483)
V
GS
= 4.5 V,
V
DS
0.5 V,
T
C
= 85 °C
V
GS
= 10 V,
V
DS
0.5 V,
T
C
= 85 °C
Continuous drain current
1)
T
C
= 100 °C,
V
GS
= 4.5V
Pulsed drain current
A
I
D
80
I
D puls
E
AS
320
Avalanche energy, single pulse
I
D
= 36 A,
R
GS
= 25
Power dissipation
T
C
= 25 °C
Operating temperature
2)
Peak temperature ( single event )
2
J
P
tot
300
W
T
j
T
jpeak
T
stg
-40 ...+175
°C
200
Storage temperature
DIN humidity category, DIN 40 040
-55 ... +150
E
IEC climatic category; DIN IEC 68-1
40/150/56
1current limited by bond wire
2Note: Thermal trip temperature of temperature sensor is below 175°C
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BTS306E3043 Transient Voltage Suppressor Diodes
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